2013. 3. 31 1/2 semiconductor technical data kds160e silicon epitaxial planar diode revision no : 5 ultra high speed switching application. features h small package : esc. h low forward voltage. h fast reverse recovery time. h small total capacitance. maximum rating (ta=25 ? ) 1. anode 2. cathode esc dim millimeters a b c d e 1.60 0.10 1.20 0.10 0.80 0.10 0.30 0.05 0.60 0.10 cathode mark d c b a 1 2 e f 0.13 0.05 f g + _ + _ + _ + _ + _ + _ 0.20 0.10 + _ gg electrical characteristics (ta=25 ? ) type name marking f u characteristic symbol rating unit maximum (peak) reverse voltage v rm 85 v reverse voltage v r 80 v maximum (peak) forward current i fm 300 ma average forward current i o 100 ma surge current (10ms) i fsm 2 a power dissipation p d * 150 mw junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? characteristic symbol test condition min. typ. max. unit forward voltage v f(1) i f =1ma - 0.60 - v v f(2) i f =10ma - 0.72 - v f(3) i f =100ma - 0.90 1.20 reverse current i r v r =80v - - 0.5 a total capacitance c t v r =0v, f=1mhz - 0.9 3.0 pf reverse recovery time t rr i f =10ma - 1.6 4.0 ns * : mounted on a glass epoxy circuit board of 20 ? 20mm, pad dimension of 4 ? 4mm.
2013. 3. 31 2/2 kds160e revision no : 5 1 0.1 reverse voltage v (r) r r t c - v reverse current i ( a) r 10 0 reverse voltage v (v) r total capacitance c (pf) 0 i - v i - v f forward voltage v (v) 0 f 10 forward current i (ma) ff 0.2 0.4 0.6 0.8 1.0 1.2 -2 -1 10 2 10 3 10 10 1 ta=100 c t a=25 c ta=-25 c rr 20 40 60 80 -3 -2 10 -1 10 1 10 ta=100 c ta=75 c ta=50 c ta=25 c t 0.4 0.8 1.2 1.6 2.0 3 10 30 100 f=1mhz ta=25 c t - i f forward current i (ma) 0.1 0.5 rr reverse recovery time t (ns) rr f 0.3 1 3 10 30 100 1 3 5 10 30 50 100 ta=25 c fig. 1 0.3 fig. 1. reverse recovery time(t ) test circuit rr 50 ? 2k ? e 50 ? input waveform input 0.01 f dut output sampling oscilloscope (r =50 ? ) in waveform 0.1 i r 0 i r f i =10ma rr t pulse generator (r =50 ? ) out 50ns -6v 0
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